参数项参数值
参数项参数值
ConfigurationDual
Collector- Base Voltage VCBO- 40 V, 60 V
Maximum DC Collector Current- 200 mA, 200 mA
Collector- Emitter Voltage VCEO Max40 V
KRHTS8541219000
TechnologySi
Transistor PolarityNPN, PNP
Minimum Operating Temperature- 55 C
JPHTS8541210101
Emitter- Base Voltage VEBO- 5 V, 6 V
CAHTS8541210000
QualificationAEC-Q101
ImageON Semiconductor SMBT3946DW1T1G
DescriptionBipolar Transistors - BJT SS GP XSTR DUAL 40V
Collector-Emitter Saturation Voltage- 250 mV, 200 mV
Package / CaseSOT-363-6
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandON Semiconductor
ManufacturerON Semiconductor
RoHS Details
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
MXHTS85412101
SeriesMBT3946DW1T1
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000265 oz
CNHTS8541210000
Pd - Power Dissipation150 mW