SQJ474EP-T1_GE3

SQJ474EP-T1_GE3

厂牌：Vishay

包装：卷装 1

类目：元器件 > 分立器件 > MOSFET

编号：B000000002059

描述：N-CH 100-V PPAK SO-8L

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min28 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage1.5 V

TechnologySi

Id - Continuous Drain Current26 A

Transistor PolarityN-Channel

Height1.04 mm

Length6.15 mm

Vgs - Gate-Source Voltage- 20 V, + 20 V

QualificationAEC-Q101

ManufacturerVishay

KRHTS8541299000

PackagingReel

PackagingCut Tape

PackagingMouseReel

Typical Turn-On Delay Time5 ns

Factory Pack Quantity3000

Minimum Operating Temperature- 55 C

BrandVishay Semiconductors

JPHTS8541290100

Rds On - Drain-Source Resistance22 mOhms

Transistor Type1 N-Channel

Maximum Operating Temperature+ 175 C

Typical Turn-Off Delay Time18 ns

Package / CasePowerPAK-SO-8-4

CAHTS8541290000

SubcategoryMOSFETs

TARIC8541290000

RoHS Details

Product TypeMOSFET

Width5.13 mm

Mounting StyleSMD/SMT

ImageVishay Semiconductors SQJ474EP-T1_GE3

Qg - Gate Charge30 nC

DescriptionMOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified

MXHTS85412999

Product CategoryMOSFET

SeriesSQ

USHTS8541290095

Channel ModeEnhancement

Unit Weight0.017870 oz

Fall Time40 ns

CNHTS8541290000

Pd - Power Dissipation45 W

Vds - Drain-Source Breakdown Voltage100 V

Number of Channels1 Channel

Rise Time20 ns