参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current320 mA
Transistor PolarityN-Channel
TechnologySi
Rds On - Drain-Source Resistance4.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Height4.01 mm
Width2.41 mm
Typical Turn-On Delay Time7 ns
Mounting StyleThrough Hole
MXHTS85412101
CNHTS8541210000
ProductMOSFET Small Signal
KRHTS8541219000
Qg - Gate Charge-
JPHTS8541210101
Package / CaseTO-92-3
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
SeriesZVNL110
Channel ModeEnhancement
Product TypeMOSFET
ManufacturerDiodes Incorporated
DescriptionMOSFET N-Chnl 100V
TARIC8541210000
Factory Pack Quantity4000
BrandDiodes Incorporated
ImageDiodes Incorporated ZVNL110A
Product CategoryMOSFET
Fall Time12 ns
RoHS Details
SubcategoryMOSFETs
Unit Weight0.016000 oz
Pd - Power Dissipation700 mW
USHTS8541210095
TypeFET
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time12 ns