参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 100 mA, 1 V
Gain Bandwidth Product fT80 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max45 V
TechnologySi
ConfigurationSingle
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
DC Collector/Base Gain hfe Min160 at 100 mA, 1 V, 40 at 500 mA, 1 V
QualificationAEC-Q101
Mounting StyleSMD/SMT
Width1.4 mm
Height1 mm
JPHTS8541210101
Length3 mm
Maximum Operating Temperature+ 150 C
MXHTS85412101
Factory Pack Quantity3000
KRHTS8541219000
Minimum Operating Temperature- 65 C
CAHTS8541210000
Package / CaseSOT-23-3
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.001058 oz
RoHS Details
Pd - Power Dissipation250 mW
BrandNexperia
USHTS8541210075
DescriptionBipolar Transistors - BJT PNP45V 500mA
ImageNexperia BC807-25,215
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
SubcategoryTransistors
Moisture Sensitivity Level1 (Unlimited)