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商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max160
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max- 80 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Collector-Emitter Saturation Voltage- 0.5 V
DC Collector/Base Gain hfe Min40
Width3.93 mm
Height4.7 mm
Length4.7 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTO-92-3 Kinked Lead
Mounting StyleThrough Hole
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingAmmo Pack
Unit Weight0.008466 oz
TARIC8541210000
RoHS Details
Pd - Power Dissipation1 W
Part # AliasesBC640TA_NL
ImageON Semiconductor / Fairchild BC640TA
SeriesBC640
BrandON Semiconductor / Fairchild
Factory Pack Quantity2000
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541210095
DescriptionBipolar Transistors - BJT TO-92 PNP GP AMP
Moisture Sensitivity LevelNot Applicable