参数项参数值
参数项参数值
Forward Transconductance - Min38 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.2 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time13 ns
Rds On - Drain-Source Resistance7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time24 ns
Width5.15 mm
MXHTS85412999
Height1.27 mm
Length5.9 mm
KRHTS8541299000
Qg - Gate Charge30 nC
CNHTS8541290000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingReel
Fall Time6 ns
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
SeriesOptiMOS 5
BrandInfineon Technologies
ImageInfineon Technologies BSC070N10NS5ATMA1
Unit Weight0.017870 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation83 W
Part # AliasesBSC070N10NS5 SP001241596
DescriptionMOSFET N-Ch 100V 90A TDSON-8
USHTS8541290095
Vds - Drain-Source Breakdown Voltage100 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)