参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT180 Mhz
ConfigurationSingle
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
KRHTS8541219000
TechnologySi
JPHTS8541210101
Transistor PolarityNPN
CAHTS8541210000
Emitter- Base Voltage VEBO5 V
Minimum Operating Temperature- 55 C
ImageON Semiconductor S2SC4617G
QualificationAEC-Q101
DescriptionBipolar Transistors - BJT SSP SC75 GP XSTR 50V
Collector-Emitter Saturation Voltage0.4 V
Package / CaseSC-75-3
DC Collector/Base Gain hfe Min120
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity3000
Mounting StyleSMD/SMT
BrandON Semiconductor
Series2SC4617
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
TARIC8541210000
MXHTS85412101
RoHS Details
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000089 oz
CNHTS8541210000
Pd - Power Dissipation125 mW
Moisture Sensitivity Level1 (Unlimited)