参数项参数值
参数项参数值
PackagingCut Tape (CT)
Package / Case8-PowerTDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C11A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackagePowerDI5060-8
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4004 pF @ 20 V
QualificationAEC-Q101
Moisture Sensitivity Level1 (Unlimited)