参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Transistor PolarityN-Channel
Vgs th - Gate-Source Threshold Voltage5 V
Rds On - Drain-Source Resistance104 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time100 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time40 ns
RoHS Details
CNHTS8541290000
Qg - Gate Charge100 nC
ImageROHM Semiconductor R6042JNZ4C13
Package / CaseTO-247-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
SeriesBM14270MUV-LB
Fall Time35 ns
PackagingTube
BrandROHM Semiconductor
TARIC8541290000
Factory Pack Quantity30
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation495 W
USHTS8541290095
DescriptionMOSFET 600V N-CH 42A POWER
Vds - Drain-Source Breakdown Voltage600 V
TradenamePrestoMOS
Number of Channels1 Channel
Rise Time30 ns
Moisture Sensitivity Level1 (Unlimited)