参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
QualificationAEC-Q101
JPHTS8541210101
CAHTS8541210000
MXHTS85412101
KRHTS8541219000
RoHS Details
PackagingReel
PackagingCut Tape
PackagingMouseReel
USHTS8541210095
Product TypeBJTs - Bipolar Transistors
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
SubcategoryTransistors
TARIC8541210000
Factory Pack Quantity10000
ImageON Semiconductor NSVBC847BLT3G
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
Unit Weight0.000282 oz
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)