参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
MXHTS85412101
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541210000
RoHS Details
ImageON Semiconductor NSVBC847BLT3G
PackagingReel
PackagingCut Tape
PackagingMouseReel
SubcategoryTransistors
BrandON Semiconductor
ManufacturerON Semiconductor
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
Unit Weight0.000282 oz
USHTS8541210095
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT SS SOT23 GP XSTR NPN 45V
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)