参数项参数值
参数项参数值
Forward Transconductance - Min26 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current19 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time18 ns
Width4.4 mm
Rds On - Drain-Source Resistance46 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge73 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingTube
Factory Pack Quantity2000
CNHTS8541290000
BrandInfineon / IR
ManufacturerInfineon
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET MOSFT 250V 19A 46mOhm 73nC
ImageInfineon / IR IRFI4229PBF
Fall Time13 ns
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.211644 oz
USHTS8541290095
Pd - Power Dissipation46 W
Vds - Drain-Source Breakdown Voltage250 V
Number of Channels1 Channel
Rise Time17 ns