参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current1 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage450 mV
TechnologySi
Rds On - Drain-Source Resistance510 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time22 ns
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time3 ns
Mounting StyleSMD/SMT
Factory Pack Quantity10000
CNHTS8541210000
MXHTS85412101
KRHTS8541109000
Unit Weight0.000028 oz
Qg - Gate Charge1.4 nC
JPHTS8541210101
Package / CaseDFN-1006-3
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Channel ModeEnhancement
Product TypeMOSFET
Product CategoryMOSFET
TARIC8541210000
ManufacturerNexperia
DescriptionMOSFET 30V P-Channel Trench MOSFET
BrandNexperia
Fall Time5 ns
RoHS Details
SubcategoryMOSFETs
Pd - Power Dissipation760 mW
USHTS8541210095
Part # Aliases934068611315
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time6 ns
Moisture Sensitivity Level1 (Unlimited)