在线商城 
商品参数
参数项参数值
参数项参数值
Gain Bandwidth Product fT3 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current4 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.8 V
DC Collector/Base Gain hfe Min15
Height11.04 mm
Width2.66 mm
Length7.74 mm
Package / CaseTO-225-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingBulk
RoHS Details
Unit Weight0.068784 oz
Pd - Power Dissipation36 W
SeriesBD442
BrandON Semiconductor
ImageON Semiconductor BD442G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity500
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 4A 80V 36W PNP
Moisture Sensitivity LevelNot Applicable