参数项参数值
参数项参数值
DC Current Gain hFE Max140
Gain Bandwidth Product fT5.5 GHz
Collector- Base Voltage VCBO20 V
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current120 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO3 V
DC Collector/Base Gain hfe Min70
MXHTS85412999
KRHTS8541219000
Package / CaseSOT-89-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
Unit Weight0.000353 oz
RoHS Details
Pd - Power Dissipation1 W
SeriesBFQ19
Part # AliasesSP001125294 BFQ19SH6327XTSA1
ImageInfineon Technologies BFQ 19S H6327
BrandInfineon Technologies
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerInfineon
USHTS8541210075
DescriptionBipolar Transistors - BJT RF BIP TRANSISTORS