参数项参数值
参数项参数值
DC Current Gain hFE Max140
Gain Bandwidth Product fT5.5 GHz
Collector- Base Voltage VCBO20 V
Collector- Emitter Voltage VCEO Max15 V
Continuous Collector Current120 mA
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO3 V
DC Collector/Base Gain hfe Min70
JPHTS8541290100
MXHTS85412999
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandInfineon Technologies
KRHTS8541219000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Package / CaseSOT-89-4
Minimum Operating Temperature- 65 C
CAHTS8541290000
CNHTS8541290000
TARIC8541290000
Unit Weight0.000353 oz
RoHS Details
Pd - Power Dissipation1 W
SeriesBFQ19
DescriptionBipolar Transistors - BJT RF BIP TRANSISTORS
Part # AliasesSP001125294 BFQ19SH6327XTSA1
ImageInfineon Technologies BFQ 19S H6327
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerInfineon
USHTS8541210075