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BSC050NE2LSATMA1
厂牌：Infineon Technologies
包装：卷装 1
类目：元器件 > 分立器件 > MOSFET
编号：B000000014309
描述：Trans MOSFET N-CH 25V 39A 8-Pin TDSON EP T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min38 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current58 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.5 ns
Rds On - Drain-Source Resistance4.2 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time11.4 ns
Width5.15 mm
Height1.27 mm
Length5.9 mm
MXHTS85412999
Qg - Gate Charge14 nC
KRHTS8541299000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Channel ModeEnhancement
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.010582 oz
RoHS Details
Pd - Power Dissipation28 W
Part # AliasesBSC050NE2LS SP000756340
ImageInfineon Technologies BSC050NE2LSATMA1
BrandInfineon Technologies
Factory Pack Quantity5000
Product TypeMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage25 V
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time2.2 ns
TradenameOptiMOS
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)