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BSC010NE2LSIATMA1
厂牌：Infineon Technologies
包装：1 1
类目：元器件 > 分立器件 > MOSFET
编号：B000000014694
描述：Trans MOSFET N-CH 25V 38A 8-Pin TDSON EP T/R
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min80 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.3 ns
Rds On - Drain-Source Resistance900 uOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Width5.15 mm
MXHTS85412999
Height1.27 mm
Length5.9 mm
KRHTS8541299000
Qg - Gate Charge78 nC
CNHTS8541290000
Package / CaseTDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Fall Time4.6 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
BrandInfineon Technologies
ImageInfineon Technologies BSC010NE2LSIATMA1
Unit Weight0.003880 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity5000
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation96 W
Part # AliasesBSC010NE2LSI SP000854376
DescriptionMOSFET N-Ch 25V 100A TDSON-8 OptiMOS
USHTS8541290095
Vds - Drain-Source Breakdown Voltage25 V
TradenameOptiMOS
Number of Channels1 Channel
Rise Time6.2 ns