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商品参数
参数项参数值
参数项参数值
PackagingBulk
Package / Case3-ESIP
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 1A, 10A
Current - Collector Cutoff (Max)100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 8A, 4V
Frequency - Transition20MHz
Supplier Device PackageMT-200
Current - Collector (Ic) (Max)17 A
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max200 W
Moisture Sensitivity Level1 (Unlimited)