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IPD60R380C6ATMA1
厂牌：Infineon Technologies
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000000021591
描述：MOSFET N-CH 600V 10.6A TO252
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current10.6 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time15 ns
Width6.22 mm
Rds On - Drain-Source Resistance340 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time110 ns
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge32 nC
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
ImageInfineon Technologies IPD60R380C6ATMA1
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time9 ns
BrandInfineon Technologies
ManufacturerInfineon
SeriesCoolMOS C6
Factory Pack Quantity2500
Unit Weight0.139332 oz
Product CategoryMOSFET
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET N-Ch 600V 10.6A DPAK-2
Pd - Power Dissipation83 W
Part # AliasesIPD60R380C6 SP001117716
Vds - Drain-Source Breakdown Voltage600 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)