参数项参数值
参数项参数值
DC Current Gain hFE Max400
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.15 V
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541219000
Package / CasePCP-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
CNHTS8541290000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageON Semiconductor 2SD1623T-TD-E
TARIC8541290000
RoHS Details
Unit Weight0.004233 oz
Series2SD1623
Factory Pack Quantity1000
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation1.3 W
BrandON Semiconductor
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT BIP NPN 2A 50V
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)