参数项参数值
参数项参数值
DC Current Gain hFE Max300
Collector- Base Voltage VCBO60 V
Collector- Emitter Voltage VCEO Max60 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1.6 V
DC Collector/Base Gain hfe Min50
MXHTS85412101
KRHTS8541299000
Mounting StyleThrough Hole
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
PackagingWaffle
CNHTS8541210000
BrandMicrochip / Microsemi
Factory Pack Quantity237
ManufacturerMicrochip
TARIC8541210000
RoHSN
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT BJTs
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Unit Weight0.086579 oz
USHTS8541290095
Pd - Power Dissipation500 mW
Moisture Sensitivity Level1 (Unlimited)