参数项参数值
参数项参数值
DC Current Gain hFE Max75 at 1 mA, 10 VDC
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current800 mA
Collector- Emitter Voltage VCEO Max50 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage300 mV
Width2.74 mm
Height1.8 mm
DC Collector/Base Gain hfe Min325 at 1 mA, 10 VDC
Length3.25 mm
Mounting StyleSMD/SMT
Package / CaseUB-3
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
PackagingWaffle
BrandMicrochip / Microsemi
Factory Pack Quantity258
ManufacturerMicrochip
RoHSN
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT BJTs
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Unit Weight0.048484 oz
Pd - Power Dissipation500 mW
Moisture Sensitivity Level1 (Unlimited)