参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min5.5 S
TechnologySi
Vgs th - Gate-Source Threshold Voltage1.5 V
Transistor PolarityN-Channel
Id - Continuous Drain Current2.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
QualificationAEC-Q101
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Typical Turn-On Delay Time4 ns
Rds On - Drain-Source Resistance150 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time12 ns
Package / CaseSOT-23-3
ImageVishay / Siliconix SQ2308CES-T1_GE3
PackagingCut Tape
PackagingMouseReel
PackagingReel
SubcategoryMOSFETs
Maximum Operating Temperature+ 175 C
BrandVishay / Siliconix
TARIC8541290000
Mounting StyleSMD/SMT
Product CategoryMOSFET
DescriptionMOSFET 60V 2.3A 2watt AEC-Q101 Qualified
ManufacturerVishay
Factory Pack Quantity3000
Qg - Gate Charge5.3 nC
MXHTS85412999
RoHS Details
SeriesSQ
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Fall Time12 ns
Unit Weight0.000282 oz
CNHTS8541290000
Pd - Power Dissipation2 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)