参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current43.3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance72 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time85 ns
Width5.21 mm
MXHTS85412999
Height21.1 mm
Length16.13 mm
KRHTS8541299000
Qg - Gate Charge161 nC
CNHTS8541290000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 40 C
Channel ModeEnhancement
PackagingTube
Fall Time6 ns
TARIC8541290000
RoHS Details
SeriesCoolMOS CFDA
BrandInfineon Technologies
ImageInfineon Technologies IPW65R080CFDA
Unit Weight1.340411 oz
Product CategoryMOSFET
SubcategoryMOSFETs
Factory Pack Quantity240
ManufacturerInfineon
Product TypeMOSFET
Pd - Power Dissipation391 W
Part # AliasesIPW65R8CFDAXK SP000875806 IPW65R080CFDAFKSA1
DescriptionMOSFET N-Ch 650V 43.3A TO247-3
USHTS8541290095
Vds - Drain-Source Breakdown Voltage650 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time18 ns