参数项参数值
参数项参数值
Forward Transconductance - Min1.4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current1.9 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6 ns
Rds On - Drain-Source Resistance300 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time208 ns
Height1.6 mm
Width3.5 mm
Length6.5 mm
MXHTS85412999
Qg - Gate Charge13 nC
KRHTS8541299000
Package / CasePG-SOT-223-4
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Fall Time87 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
Unit Weight0.004233 oz
Pd - Power Dissipation1.8 W
SeriesBSP171
BrandInfineon Technologies
ImageInfineon Technologies BSP171PH6327XTSA1
ManufacturerInfineon
Product TypeMOSFET
Factory Pack Quantity1000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541290095
Number of Channels1 Channel
Rise Time25 ns
DescriptionMOSFET P-Ch -60V 1.9A SOT-223-3
Moisture Sensitivity Level1 (Unlimited)