参数项参数值
参数项参数值
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current60 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage2 V
Rds On - Drain-Source Resistance4.4 mOhms
Typical Turn-Off Delay Time72 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time23 ns
MXHTS85411001
Qg - Gate Charge169 nC
BrandVishay Semiconductors
ImageVishay Semiconductors SQJ407EP-T1_GE3
KRHTS8541109000
Mounting StyleSMD/SMT
JPHTS8541100901
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
Package / CasePowerPAK-SO-8-4
Minimum Operating Temperature- 55 C
CAHTS8541100090
Fall Time14 ns
CNHTS8541210000
PackagingCut Tape
PackagingReel
PackagingMouseReel
Unit Weight0.017870 oz
Pd - Power Dissipation68 W
SeriesSQ
DescriptionMOSFET -30V Vds PowerPAK AEC-Q101 Qualified
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage30 V
ManufacturerVishay
Number of Channels1 Channel
Product CategoryMOSFET
Rise Time19 ns
TradenameTrenchFET
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)