参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current17.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel
Width4.4 mm
MXHTS85412999
Height15.65 mm
Length10 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge68 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time6.4 ns
TARIC8541290000
PackagingTube
BrandInfineon Technologies
RoHS Details
ImageInfineon Technologies IPP65R190CFD
Product CategoryMOSFET
SeriesCoolMOS CFD2
Unit Weight0.211644 oz
SubcategoryMOSFETs
ManufacturerInfineon
Factory Pack Quantity500
Product TypeMOSFET
Pd - Power Dissipation151 W
Part # AliasesSP000881160 IPP65R19CFDXK IPP65R190CFDXKSA1
USHTS8541290095
DescriptionMOSFET N-Ch 650V 17.5A TO220-3 CoolMOS CFD2
Vds - Drain-Source Breakdown Voltage650 V
TradenameCoolMOS
Number of Channels1 Channel
Rise Time8.4 ns