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商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min32 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Rds On - Drain-Source Resistance45 mOhms
Width5.3 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
Length16.26 mm
Height21.46 mm
MXHTS85415001
KRHTS8541299000
Package / CaseTO-247-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
CNHTS8541500000
BrandIXYS
SeriesHiPerFET
Factory Pack Quantity30
ManufacturerIXYS
TARIC8541500000
Product CategoryMOSFET
Channel ModeEnhancement
Product TypeMOSFET
Fall Time16 ns
RoHS Details
DescriptionMOSFET DIODE Id50 BVdass200
ImageIXYS IXFH50N20
Unit Weight0.229281 oz
SubcategoryMOSFETs
USHTS8541290095
Pd - Power Dissipation300 W
TradenameHyperFET
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity LevelNot Applicable