参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min32 S
Id - Continuous Drain Current50 A
Transistor PolarityN-Channel
TechnologySi
Rds On - Drain-Source Resistance45 mOhms
Width5.3 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time72 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Length16.26 mm
Height21.46 mm
Typical Turn-On Delay Time18 ns
Package / CaseTO-247-3
SeriesHiPerFET
MXHTS85415001
Factory Pack Quantity30
ManufacturerIXYS
SubcategoryMOSFETs
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
CNHTS8541500000
BrandIXYS
Minimum Operating Temperature- 55 C
TARIC8541500000
Maximum Operating Temperature+ 150 C
Product CategoryMOSFET
PackagingTube
Channel ModeEnhancement
Product TypeMOSFET
Fall Time16 ns
RoHS Details
DescriptionMOSFET DIODE Id50 BVdass200
ImageIXYS IXFH50N20
Unit Weight0.229281 oz
USHTS8541290095
Pd - Power Dissipation300 W
TradenameHyperFET
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity LevelNot Applicable