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DMG1029SV-7
厂牌：Diodes
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000034459793
描述：MOSFET N/P-CH 60V 480/320 SOT563
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min80 mS, 50 mS
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel, P-Channel
Id - Continuous Drain Current500 mA, 360 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.9 ns, 5.5 ns
Rds On - Drain-Source Resistance1.7 Ohms, 4 Ohms
Transistor Type1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time15.7 ns, 10.6 ns
Minimum Operating Temperature- 55 C
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingReel
PackagingCut Tape
Qg - Gate Charge0.3 nC, 0.28 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG1029SV-7
Factory Pack Quantity3000
SeriesDMG1029
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 60V Comp Pair ENH 1.7 Ohm 10V 500mA
Channel ModeEnhancement
Fall Time9.9 ns, 11.6 ns
Unit Weight0.000106 oz
Pd - Power Dissipation450 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time3.4 ns, 7.9 ns
Moisture Sensitivity Level1 (Unlimited)