参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage300 mV
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time15 ns
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
Channel ModeEnhancement
Fall Time10 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
ImageROHM Semiconductor EM6K7T2CR
BrandROHM Semiconductor
ManufacturerROHM Semiconductor
Pd - Power Dissipation150 mW
Factory Pack Quantity8000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
USHTS8541210095
DescriptionMOSFET 1.2V N-CHANNEL DRIVE
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels2 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)