参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
ConfigurationSingle
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.6 A
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Minimum Operating Temperature- 55 C
Product CategoryBipolar Transistors - BJT
Length2.9 mm
Height0.95 mm
Collector-Emitter Saturation Voltage1 V
ImageROHM Semiconductor SST2222AT116
Maximum Operating Temperature+ 150 C
DC Collector/Base Gain hfe Min35
Width1.3 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
DescriptionBipolar Transistors - BJT NPN 40V 0.6A
Mounting StyleSMD/SMT
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
BrandROHM Semiconductor
RoHS Details
SubcategoryTransistors
SeriesSST2222A
Unit Weight0.001023 oz
Part # AliasesSST2222A
Pd - Power Dissipation350 mW
Moisture Sensitivity Level1 (Unlimited)