参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min0.006 S to 0.012 S
Id - Continuous Drain Current20 mA
Transistor PolarityN-Channel
TechnologySi
MXHTS85412101
Transistor TypeJFET
KRHTS8541219000
Gate-Source Cutoff Voltage- 4.5 V
CNHTS8541210000
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
ProductRF JFET
Maximum Drain Gate Voltage25 V
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Product TypeRF JFET Transistors
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
DescriptionRF JFET Transistors NCh RF Transistor
TARIC8541210000
Product CategoryRF JFET Transistors
RoHS Details
SeriesMMBFJ211
SubcategoryTransistors
Unit Weight0.000282 oz
USHTS8541210095
Pd - Power Dissipation225 mW
TypeJFET
Vgs - Gate-Source Breakdown Voltage- 25 V
Moisture Sensitivity Level1 (Unlimited)