MMBFJ211

厂牌：Fairchild Semiconductor

包装：卷装 1

类目：元器件 > 通讯射频 > 射频JFET

编号：B000038776297

描述：RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET

商品参数

参数项参数值

Forward Transconductance - Min0.006 S to 0.012 S

ConfigurationSingle

TechnologySi

Id - Continuous Drain Current20 mA

Transistor PolarityN-Channel

MXHTS85412101

KRHTS8541219000

Gate-Source Cutoff Voltage- 4.5 V

Transistor TypeJFET

Minimum Operating Temperature- 55 C

JPHTS8541210101

CAHTS8541210000

Maximum Drain Gate Voltage25 V

ProductRF JFET

CNHTS8541210000

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

Factory Pack Quantity3000

PackagingCut Tape

PackagingMouseReel

PackagingReel

Product TypeRF JFET Transistors

BrandON Semiconductor / Fairchild

DescriptionRF JFET Transistors NCh RF Transistor

TARIC8541210000

Product CategoryRF JFET Transistors

RoHS Details

SeriesMMBFJ211

SubcategoryTransistors

ManufacturerON Semiconductor

Unit Weight0.000282 oz

USHTS8541210095

Pd - Power Dissipation225 mW

Vgs - Gate-Source Breakdown Voltage- 25 V

TypeJFET

Moisture Sensitivity Level1 (Unlimited)