参数项参数值
参数项参数值
DC Current Gain hFE Max400
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 50 V
Maximum DC Collector Current0.5 A
Collector- Emitter Voltage VCEO Max- 45 V
Continuous Collector Current- 0.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.7 V
DC Collector/Base Gain hfe Min160
Width1.3 mm
Height0.94 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000282 oz
SeriesBC807-25L
Pd - Power Dissipation300 mW
BrandON Semiconductor
ImageON Semiconductor SBC807-25LT1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
Moisture Sensitivity Level1 (Unlimited)