参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 100 mA, 1 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current500 mA
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage700 mV
DC Collector/Base Gain hfe Min40
Width1.7 mm
Height1 mm
Length3.1 mm
MXHTS85412101
KRHTS8541219000
Package / CaseTSOP-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000386 oz
Pd - Power Dissipation370 mW
RoHS Details
ImageNexperia BC817DS,115
SeriesBC817
Part # Aliases934057319115
BrandNexperia
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS DOUBLE TAPE-7
Moisture Sensitivity Level1 (Unlimited)