CSD13201W10

CSD13201W10

厂牌：Texas Instruments

包装：Tape & Reel (TR) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000038858654

描述：MOSFET N-CH NexFET Pwr MOSFET

商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min23 S

ConfigurationSingle

Width1 mm

Vgs th - Gate-Source Threshold Voltage650 mV

TechnologySi

Id - Continuous Drain Current1.6 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 8 V, + 8 V

CNHTS8541290000

Typical Turn-On Delay Time3.9 ns

Height0.62 mm

MXHTS85412999

Length1 mm

Rds On - Drain-Source Resistance34 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time14.4 ns

Package / CaseDSBGA-4

KRHTS8541299000

Maximum Operating Temperature+ 150 C

Mounting StyleSMD/SMT

PackagingCut Tape

PackagingMouseReel

PackagingReel

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Qg - Gate Charge2.3 nC

TARIC8541290000

ManufacturerTexas Instruments

RoHS Details

BrandTexas Instruments

ImageTexas Instruments CSD13201W10

Factory Pack Quantity3000

SubcategoryMOSFETs

SeriesCSD13201W10

Product CategoryMOSFET

Product TypeMOSFET

DescriptionMOSFET N-CH NexFET Pwr MOSFET

Channel ModeEnhancement

USHTS8541290095

Fall Time9.7 ns

Unit Weight0.000039 oz

Pd - Power Dissipation1.2 W

TradenameNexFET

Vds - Drain-Source Breakdown Voltage12 V

Number of Channels1 Channel

Rise Time5.9 ns

Moisture Sensitivity Level1 (Unlimited)