参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 40 V
Collector- Emitter Voltage VCEO Max- 40 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V
Collector-Emitter Saturation Voltage- 0.4 V
MXHTS85412101
KRHTS8541219000
Package / CaseDFN0606-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.282192 oz
ImageDiodes Incorporated MMBT3906FZ-7B
TARIC8541210000
Pd - Power Dissipation350 mW
RoHS Details
Factory Pack Quantity10000
SeriesMMBT39
ManufacturerDiodes Incorporated
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
TradenameMMBT3906
SubcategoryTransistors
DescriptionBipolar Transistors - BJT PNP 40Vceo 0.3W 250mW 250MHz
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)