参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 500 mA, 2 V
Gain Bandwidth Product fT110 MHz
Collector- Base Voltage VCBO40 V
ConfigurationSingle
Maximum DC Collector Current4 A
Collector- Emitter Voltage VCEO Max40 V
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
KRHTS8541299000
QualificationAEC-Q101
Height1 mm
Length3.1 mm
JPHTS8541290100
Minimum Operating Temperature- 65 C
CAHTS8541290000
Package / CaseTSOP-6
DC Collector/Base Gain hfe Min200 at 500 mA, 2 V, 200 at 1 A, 2 V, 175 at 2 A, 2 V, 80 at 4 A, 2 V, 30 at 6 A, 2 V
RoHS Details
Factory Pack Quantity3000
ImageNexperia PBSS5440D,115
PackagingReel
PackagingCut Tape
PackagingMouseReel
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Width1.7 mm
TARIC8541290000
ManufacturerNexperia
BrandNexperia
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
MXHTS85412999
Product TypeBJTs - Bipolar Transistors
USHTS8541290075
Unit Weight0.000705 oz
CNHTS8541290000
Part # Aliases934057955115
Pd - Power Dissipation2500 mW
Moisture Sensitivity Level1 (Unlimited)