参数项参数值
参数项参数值
DC Current Gain hFE Max560 at 1 mA, 6 V
Gain Bandwidth Product fT350 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max50 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage0.1 V
MXHTS85423901
DC Collector/Base Gain hfe Min120
CNHTS8541210000
Package / CaseEMT-3F-3
Mounting StyleSMD/SMT
JPHTS8542390990
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
TARIC8542399000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandROHM Semiconductor
Series2SCR523EB
RoHS Details
ImageROHM Semiconductor 2SCR523EBTL
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity3000
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation150 mW
Part # Aliases2SCR523EB
USHTS8542390001
DescriptionBipolar Transistors - BJT NPN General Purpose Amplification Transistor
Moisture Sensitivity Level1 (Unlimited)