参数项参数值
参数项参数值
Forward Transconductance - Min200 mS, 200 mS
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current300 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time3 ns, 3 ns
Width1.25 mm
Rds On - Drain-Source Resistance1.6 Ohms
Height0.9 mm
Transistor Type2 N-Channel
Typical Turn-Off Delay Time5.5 ns, 5.5 ns
Length2 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-363-6
Qg - Gate Charge600 pC
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
PackagingMouseReel
PackagingCut Tape
PackagingReel
ImageInfineon Technologies 2N7002DWH6327XT
RoHS Details
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time3.1 ns, 3.1 ns
BrandInfineon Technologies
ManufacturerInfineon
Series2N7002
Product CategoryMOSFET
Factory Pack Quantity3000
Unit Weight0.000265 oz
USHTS8541290095
Product TypeMOSFET
DescriptionMOSFET N-Ch 60V 300mA SOT-363-6
Pd - Power Dissipation500 mW
Part # AliasesSP000917596 2N7002DWH6327XTSA1
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time3.3 ns, 3.3 ns