参数项参数值
参数项参数值
DC Current Gain hFE Max200 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation200 mW
ImageNexperia BC847BW,135
Part # Aliases934021770135
Factory Pack Quantity10000
BrandNexperia
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
SubcategoryTransistors
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS GP TAPE-11
Moisture Sensitivity Level1 (Unlimited)