参数项参数值
参数项参数值
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
MXHTS85412101
Length1.6 mm
Width0.8 mm
Height0.75 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage- 0.4 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseSC-75-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageON Semiconductor MMBT3906TT1G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
TARIC8541210000
DescriptionBipolar Transistors - BJT 200mA 40V PNP
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMBT3906T
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.000089 oz
USHTS8541210075
Pd - Power Dissipation225 mW
Moisture Sensitivity Level1 (Unlimited)