参数项参数值
参数项参数值
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max- 40 V
Continuous Collector Current- 0.2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Length2.1 mm
Width1.24 mm
Height0.85 mm
Collector-Emitter Saturation Voltage- 0.4 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
Package / CaseSC-70-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageON Semiconductor MMBT3906WT1G
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 200mA 40V PNP
RoHS Details
Product CategoryBipolar Transistors - BJT
SeriesMMBT3906W
ManufacturerON Semiconductor
SubcategoryTransistors
Unit Weight0.000219 oz
Pd - Power Dissipation150 mW
Moisture Sensitivity Level1 (Unlimited)