参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage5 V
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
ManufacturerVishay
PackagingTube
Typical Turn-On Delay Time12 ns
Factory Pack Quantity75
BrandVishay / Siliconix
Minimum Operating Temperature- 55 C
Rds On - Drain-Source Resistance3.2 Ohms
Maximum Operating Temperature+ 150 C
Typical Turn-Off Delay Time11 ns
Package / CaseTO-252-3
SubcategoryMOSFETs
RoHS Details
Product TypeMOSFET
Mounting StyleSMD/SMT
ImageVishay / Siliconix SIHD3N50D-GE3
Qg - Gate Charge6 nC
DescriptionMOSFET 500V Vds 30V Vgs DPAK (TO-252)
Product CategoryMOSFET
SeriesD
Channel ModeEnhancement
Unit Weight0.050717 oz
Fall Time13 ns
Pd - Power Dissipation69 W
Vds - Drain-Source Breakdown Voltage500 V
Number of Channels1 Channel
Rise Time9 ns
Moisture Sensitivity Level1 (Unlimited)