IPG20N10S4L22ATMA1

IPG20N10S4L22ATMA1

厂牌：Infineon Technologies

包装：Tape & Reel (TR) 1

类目：元器件 > 分立器件 > MOSFET

编号：B000039268660

描述：Transistor MOSFET Array Dual N-CH 100V 20A 8-Pin TDSON T/R

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商品参数

参数项参数值

参数项参数值

ConfigurationDual

Vgs th - Gate-Source Threshold Voltage1.1 V

TechnologySi

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 16 V, + 16 V

QualificationAEC-Q101

Typical Turn-On Delay Time5 ns, 5 ns

Rds On - Drain-Source Resistance20 mOhms, 20 mOhms

Transistor Type2 N-Channel

Typical Turn-Off Delay Time30 ns, 30 ns

Width5.15 mm

Height1.27 mm

MXHTS85412999

Length5.9 mm

KRHTS8541299000

Qg - Gate Charge27 nC

Package / CaseTDSON-8

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

Channel ModeEnhancement

CNHTS8541290000

Fall Time18 ns, 18 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

ImageInfineon Technologies IPG20N10S4L22ATMA1

TARIC8541290000

Unit Weight0.003439 oz

RoHS Details

SeriesIPG20N10

Factory Pack Quantity5000

Product TypeMOSFET

Pd - Power Dissipation60 W

Part # AliasesIPG20N10S4L-22 SP000866570

BrandInfineon Technologies

Product CategoryMOSFET

SubcategoryMOSFETs

ManufacturerInfineon

DescriptionMOSFET MOSFET

Vds - Drain-Source Breakdown Voltage100 V

USHTS8541290095

Number of Channels2 Channel

Rise Time3 ns, 3 ns

Moisture Sensitivity Level1 (Unlimited)