参数项参数值
参数项参数值
Gain11.2 dB
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current26 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage40 V
MXHTS85412999
Operating Frequency100 MHz to 500 MHz
KRHTS8541299000
Package / Case375-04
CNHTS8504409190
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Output Power150 W
PackagingTray
ImageMACOM MRF275G
TARIC8541290000
Factory Pack Quantity10
Unit Weight1.544382 oz
ManufacturerMACOM
BrandMACOM
DescriptionRF MOSFET Transistors 100-500MHz 150Watts 28Volt 10dB
Product TypeRF MOSFET Transistors
Product CategoryRF MOSFET Transistors
Pd - Power Dissipation400 W
SubcategoryMOSFETs
USHTS8541290075
Vds - Drain-Source Breakdown Voltage65 V
TypeRF Power MOSFET
Moisture Sensitivity Level1 (Unlimited)