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SQJ457EP-T1_GE3

SQJ457EP-T1_GE3

厂牌：VISHAY
包装：--
类目：元器件 > 分立器件 > MOSFET
编号：B000040268581
描述：MOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
最新价格近期成交27单+
数量价格（含税）
1¥9.8571
10¥7.1574
100¥5.6883
500¥5.4495
1000¥5.2111
5000¥4.9600
库存：4,517交期：14起订：1增量：1
数量：
X
9.8571（单价）
合计：
￥9.86
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min26 S
Id - Continuous Drain Current36 A
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Width5.13 mm
Rds On - Drain-Source Resistance25 MOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time40 ns
Vgs - Gate-Source Voltage- 20 V, + 20 V
Length6.15 mm
Height1.04 mm
QualificationAEC-Q101
Typical Turn-On Delay Time15 ns
Package / CasePowerPAK-SO-8-4
Product TypeMOSFET
ManufacturerVishay
SeriesSQ
Qg - Gate Charge65 nC
Mounting StyleSMD/SMT
BrandVishay / Siliconix
Product CategoryMOSFET
Maximum Operating Temperature+ 175 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingMouseReel
PackagingReel
PackagingCut Tape
Factory Pack Quantity3000
SubcategoryMOSFETs
RoHS Details
Fall Time6 ns
DescriptionMOSFET P Ch -60Vds 20Vgs AEC-Q101 Qualified
ImageVishay / Siliconix SQJ457EP-T1_GE3
Unit Weight0.017870 oz
Pd - Power Dissipation68 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)