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NDS0610-G

NDS0610-G

厂牌：onsemi
包装：Tape & Reel (TR) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000040320011
描述：MOSFET FET -60V 10 OHM
最新价格近期成交12单+
数量价格（含税）
3000¥0.5840
6000¥0.5267
9000¥0.4975
15000¥0.4641
21000¥0.4445
30000¥0.4256
75000¥0.3837
150000¥0.3691
库存：3,000货期：4-7Days起订：3000增量：3000
数量：
X
0.5840（单价）
合计：
￥1752.00
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min70 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current120 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.5 ns
Rds On - Drain-Source Resistance10 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time10 ns
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Qg - Gate Charge1.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingReel
PackagingCut Tape
RoHS Details
ImageON Semiconductor NDS0610-G
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time7.5 ns
BrandON Semiconductor
ManufacturerON Semiconductor
Factory Pack Quantity3000
Product CategoryMOSFET
Unit Weight0.000326 oz
USHTS8541210095
Product TypeMOSFET
DescriptionMOSFET FET -60V 10.0 MOHM
Pd - Power Dissipation360 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time6.3 ns
Moisture Sensitivity Level1 (Unlimited)