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NDS0610
厂牌：onsemi
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000040320093
描述：MOSFET P-CH 60V 120MA SOT-23MOSFET P-Channel FET Enhancement Mode
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current120 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.5 ns
Rds On - Drain-Source Resistance10 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time10 ns
Width1.3 mm
Height1.2 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Qg - Gate Charge2.5 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
BrandON Semiconductor / Fairchild
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ProductMOSFET Small Signal
SeriesNDS0610
Product CategoryMOSFET
ManufacturerON Semiconductor
TARIC8541210000
Product TypeMOSFET
Channel ModeEnhancement
RoHS Details
Factory Pack Quantity3000
Fall Time6.3 ns
ImageON Semiconductor / Fairchild NDS0610
SubcategoryMOSFETs
DescriptionMOSFET P-Channel FET Enhancement Mode
Unit Weight0.000282 oz
USHTS8541210095
Part # AliasesNDS0610_NL
Pd - Power Dissipation360 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time6.3 ns
Moisture Sensitivity Level1 (Unlimited)