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NDS0610-G

NDS0610-G

厂牌：onsemi
包装：Cut Tape (CT) 1
类目：元器件 > 分立器件 > MOSFET
编号：B000040320094
描述：MOSFET FET -60V 10 OHM
最新价格近期成交30单+
数量价格（含税）
1¥2.7406
10¥1.7043
100¥1.0646
500¥0.7879
1000¥0.6980
库存：4,388货期：4-7Days起订：1增量：1
数量：
X
2.7406（单价）
合计：
￥2.74
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min70 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3.5 V
TechnologySi
Id - Continuous Drain Current120 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.5 ns
Rds On - Drain-Source Resistance10 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time10 ns
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Qg - Gate Charge1.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingReel
PackagingCut Tape
RoHS Details
ImageON Semiconductor NDS0610-G
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time7.5 ns
BrandON Semiconductor
ManufacturerON Semiconductor
Factory Pack Quantity3000
Product CategoryMOSFET
Unit Weight0.000326 oz
USHTS8541210095
Product TypeMOSFET
DescriptionMOSFET FET -60V 10.0 MOHM
Pd - Power Dissipation360 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time6.3 ns
Moisture Sensitivity Level1 (Unlimited)