参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO- 60 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max- 60 V
Continuous Collector Current- 0.6 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Height1.57 mm
Length6.5 mm
KRHTS8541299000
ManufacturerON Semiconductor
Minimum Operating Temperature- 65 C
JPHTS8541210101
RoHS Details
CAHTS8541210000
Collector-Emitter Saturation Voltage- 1.6 V
Package / CaseSOT-223-4
Factory Pack Quantity1000
BrandON Semiconductor
TARIC8541210000
Maximum Operating Temperature+ 150 C
Width3.5 mm
Mounting StyleSMD/SMT
PackagingReel
PackagingCut Tape
PackagingMouseReel
ImageON Semiconductor PZT2907AT1G
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 600mA 60V PNP
Product TypeBJTs - Bipolar Transistors
MXHTS85412101
SeriesPZT2907A
USHTS8541290075
Unit Weight0.006702 oz
CNHTS8541290000
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)