参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT300 MHz
ConfigurationSingle
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO6 V
Height0.5 mm
MXHTS85423999
KRHTS8541219000
Collector-Emitter Saturation Voltage0.3 V
Length1 mm
Factory Pack Quantity3000
Width0.6 mm
PackagingCut Tape
PackagingMouseReel
PackagingReel
JPHTS8542390990
Minimum Operating Temperature- 55 C
CNHTS8541290000
Package / CaseX1-DFN1006-3
CAHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated MMBT3904LP-7
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8542399000
DescriptionBipolar Transistors - BJT NPN SM SIG 60V VCBO 40V VCEO 6.0 VEBO
SeriesMMBT3904LP
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
USHTS8542390001
Unit Weight0.000282 oz
Pd - Power Dissipation1 W
Moisture Sensitivity Level1 (Unlimited)